Phase size effect in thin Ge-Se polycrystalline films

被引:0
作者
E. V. Aleksandrovich
E. V. Stepanova
A. V. Vakhrouchev
A. N. Aleksandrovich
D. L. Bulatov
机构
[1] Russian Academy of Sciences,Institute of Mechanics, Ural Branch
[2] Udmurtia State University,undefined
来源
Technical Physics | 2013年 / 58卷
关键词
Raman Spectrum; GeSe; Universal Program; Equilibrium Point Defect; Neorg Mater;
D O I
暂无
中图分类号
学科分类号
摘要
The Raman spectra of thin (d = 60–170 nm) Ge-Se polycrystalline films obtained by vacuum thermal evaporation of Ge10Se90 glass are investigated in the spectral range 110–310 cm−1. The coexistence of the glasslike and crystalline phases α-Se, β-Se, and β-GeSe2 is established using the X-ray diffraction method. Analysis of diffraction patterns and the Raman spectra of polycrystalline samples of various thicknesses demonstrates a phase size effect in the transition of Se from the α-monoclinic to the β monoclinic modification (d ∼ 120 nm). It is found that the crystalline phase of Se is of the nanodisperse type with an average grain size of ∼30–50 nm. Crystallites of β-GeSe2 have an average size of ∼100–130 nm.
引用
收藏
页码:1291 / 1296
页数:5
相关论文
共 78 条
[1]  
Sharma R K(2003)undefined Curr. Appl. Phys. 3 199-undefined
[2]  
Jain K(2004)undefined Sol. Energy 77 831-undefined
[3]  
Rastogi A C(2000)undefined Solid State Commun. 116 33-undefined
[4]  
Mathew X(2012)undefined Int. J. Mater. Chem. 2 57-undefined
[5]  
Enriquez P J(2009)undefined Appl. Therm. Eng. 29 2106-undefined
[6]  
Ulrlrich B(2008)undefined J. Non-Cryst. Solids 354 3836-undefined
[7]  
Tomm J W(2006)undefined Chalcogenide Lett. 3 15-undefined
[8]  
Dushkina N M(2003)undefined J. Mater. Sci. Lett. 22 985-undefined
[9]  
Ubale A U(1996)undefined J. Non-Cryst. Solids 198 723-undefined
[10]  
Ibragim S G(2003)undefined J. Optoelectron. Adv. Mater. 5 1327-undefined