Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si

被引：0
作者：
Jiyang Li
Lihui Song
Xuegong Yu
Deren Yang
机构：
[1] Zhejiang University,State Key Laboratory of Silicon Materials and School of Materials Science and Engineering
[2] Hangzhou Dianzi University,College of Materials and Environmental Engineering
来源：
Journal of Electronic Materials | 2018年 / 47卷
关键词：
Silicon; oxygen precipitate; recombination activity; iron contamination; hydrogen passivation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Oxygen precipitates (OPs) are unavoidably formed in Czochralski silicon (CZ-Si) containing relatively high concentrations of oxygen. The recombination behavior of such defects is also vital for bulk devices like solar cells as they can reduce the minority carrier lifetime and degrade the cell performance. In our experiments, the characteristics of oxygen precipitation in n-type CZ-Si are systematically investigated by means of Fourier transform infrared spectroscopy (FTIR), deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). It is found that the iron contamination in n-type CZ-Si can strongly influence the OPs generation and their electrical properties, whereas the hydrogen passivation can effectively reduce the recombination activity of OPs.
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页码：5039 / 5044
页数：5
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