Investigation of N-face AlGaN ultraviolet light-emitting diodes with composition-varying AlGaN electron blocking layer

被引：0
作者：
Chujun Yao
Guofeng Yang
Yuejing Li
Rui Sun
Qing Zhang
Jin Wang
S. M. Gao
机构：
[1] Jiangnan University,School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology
来源：
Optical and Quantum Electronics | 2016年 / 48卷
关键词：
AlGaN; N-face; Ultraviolet light-emitting diodes; Electron blocking layer;
D O I：
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中图分类号：
学科分类号：
摘要：
The optical and physical properties of N-face AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) are investigated numerically and compared with Ga-face AlGaN based UV-LEDs. A composition-varying AlGaN electron blocking layer (EBL) is introduced in the N-face AlGaN UV-LEDs. Detailed analysis has been carried out on the electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate. The calculated results demonstrate that theN-face UV-LED with composition-varying AlGaN EBL reveals enhanced performance than that of the Ga-face UV-LED with the same structure.
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