Sintering behavior and microwave dielectric properties of LiMVO4 (M = Mg, Zn)

被引:0
|
作者
Chunchun Li
Zhenhai Wei
Hao Luo
Liang Fang
机构
[1] Guilin University of Technology,College of Information Science and Engineering
[2] Guilin University of Technology,State Key Laboratory Breeding Base of Nonferrous Metals and Specific Materials Processing, Key Laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, College of Material Science and Engineer
来源
Journal of Materials Science: Materials in Electronics | 2015年 / 26卷
关键词
Resonant Frequency; Sinter Temperature; Relative Permittivity; Microwave Dielectric Property; Sinter Behavior;
D O I
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中图分类号
学科分类号
摘要
Two V-containing microwave dielectric ceramics, LiMgVO4 and LiZnVO4, with excellent microwave performance were prepared by a solid-state reaction route at relatively low temperatures. Using NH4VO3 to replace V2O5 could effectively reduce the sintering temperature of LiMgVO4 and LiZnVO4 to 720 °C and enhance their microwave dielectric properties. LiMgVO4 ceramics sintered at 720 °C exhibited a permittivity ~9.89, a Q × f value of 30,800 GHz and a temperature coefficient of resonant frequency ~−171 ppm/°C. LiZnVO4 ceramics had a relatively smaller τf value of −114 ppm/°C with a εr ~ 7.48, a Q × f value of 27,600 GHz. Further efforts are in progress to search for effective approaches to compensate their large negative τf values to be near zero.
引用
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页码:9117 / 9121
页数:4
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