Silicon photovoltaic cells with clusters of nickel atoms

被引：2

作者：

Bakhadyrkhanov M.K. ^{[1
]}

Valiev S.A. ^{[1
]}

Zikrillaev N.F. ^{[1
]}

Koveshnikov S.V. ^{[1
]}

Saitov E.B. ^{[1
]}

Tachilin S.A. ^{[1
]}

机构：

[1] Tashkent State Technical University, Tashkent

来源：

Applied Solar Energy (English translation of Geliotekhnika) | 2016年 / 52卷 / 04期

关键词：

Atoms - Nickel - Photoelectrochemical cells - Spectroscopy;

D O I：

10.3103/S0003701X1604006X

中图分类号：

学科分类号：

摘要：

This article considers the technology of fabricating clusters of nickel atoms in a silicon crystalline lattice with controlled parameters. Silicon solar cells with clusters of nickel atoms have been fabricated and their parameters determined. It has been established that the content of nickel atoms in the lattice makes it possible to considerably expand the spectral sensitivity region of silicon photovoltaic cells to the IR range up to 4 μm. © 2016, Allerton Press, Inc.

引用

页码：278 / 281

页数：3

共 9 条

[1]

Bakhadyrkhanov M.K., Mavlyanov A.S., Sodikov U.K., Khakkulov M.K., Silicon with binary unit cells as a novel class of materials for future photoenergetics, Appl. Solar Energy, 51, 4, pp. 258-261, (2015)

[2]

Bakhadyrkhanov M.K., Mavlyanov A.S., Sodikov U.K., Khakkulov M.K., Solar Syst. Res., 51, 4, (2015)

[3]

Abdurakhmanov B.A., Bakhadirkhanov M.K., Iliyev H.M., Et al., Silicon with clusters of impurity atoms as a novel material for photovoltaics, Nanosci. Nanotechnol., 4, 3, pp. 41-43, (2014)

[4]

Mil'vidskii M.G., Chaldyshev V.V., Nanosized atomic clusters in semiconductors is a new approach to form materials’ properties, Fiz. Tekhn. Poluprovodn., 32, 5, pp. 513-518, (1998)

[5]

Gusev A.I., Nanomaterialy, nanostruktury, nanotekhnologii, (2007)

[6]

Bakhadyrkhanov M.K., Mavlovov G.K., Ayupov K.S., Isamov S.B., Negative magnetic resistance in silicon with complexes of magnesium atoms [Mn]4, Fiz. Tekhn. Poluprovodn., 44, 9, pp. 1181-1184, (2010)

[7]

Abdurakhmanov B.A., Bakhadirkhanov M.K., Ayupov K.S., Et al., Formation of clusters of impurity atoms of nickel in silicon and controlling their parameters, Nanosci. Nanotechnol., 4, 2, pp. 23-26, (2014)

[8]

Abdurakhmanov B.A., Ayupov K.S., Bakhadyrkhanov M.K., Et al., Low-temperature diffusion of additions in silicon, Dokl. Akad. Nauk Resp. Uzbek., 4, pp. 32-36, (2010)

[9]

Valiev K.A., Pashintsv Y.I., Petrov G.V., Primenenie kontakta metal-poluprovodnik v elektronike (The Way to Apply Metal–Semiconductor Contact in Electronics), (1981)

← 1 →