Carrier Dynamics in Quantum Well Lasers

被引:0
作者
A. Thränhardt
S. W. Koch
J. Hader
J. V. Moloney
机构
[1] Philipps-Universität Marburg,Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften
[2] The University of Arizona,Arizona Center for Mathematical Sciences
来源
Optical and Quantum Electronics | 2006年 / 38卷
关键词
carrier scattering; dilute nitrides; microscopic gain calculation; nonequilibrium laser theory; optical cooling; quantum well lasers;
D O I
暂无
中图分类号
学科分类号
摘要
A fully microscopic theory is used to perform an analysis of carrier–carrier and carrier-LO phonon scattering in semiconductor quantum wells, focussing on the high-density case relevant for laser structures. A large variance of scattering times is observed depending on the material parameters, apparently contradicting popular belief in some cases. For instance, carrier–carrier scattering may slow down when the carrier density is increased. Electron-hole scattering times are found to be on the same order of magnitude as carrier-phonon scattering, making the introduction of a separate electron and hole temperature necessary. Heating by optical pumping is investigated and plasma cooling is shown to be possible by optical pumping of the laser structure.
引用
收藏
页码:361 / 368
页数:7
相关论文
共 89 条
[1]  
Asche M.(1984)undefined Phys. Status Solidi (B) 126 607-undefined
[2]  
Sarbei O.G.(1992)undefined Phys. Rev. B 45 1107-undefined
[3]  
Binder R.(1999)undefined Appl. Phys. Lett. 75 2891-undefined
[4]  
Scott D.(2003a)undefined Phys. Rev. B 67 245308-undefined
[5]  
Paul A.E.(2003b)undefined Phys. Rev. B 68 165323-undefined
[6]  
Lindberg M.(1997)undefined Phys. Status Solidi B 202 725-undefined
[7]  
Henneberger K.(2003)undefined Solid State Electron 47 513-undefined
[8]  
Koch S.W.(1999)undefined IEEE J. Quantum Electron 35 1878-undefined
[9]  
Chow W.W.(2004)undefined Appl. Phys. Lett. 85 369-undefined
[10]  
Jones E.D.(2005)undefined Phys. Rev. B 71 165320-undefined