Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method

被引：0
作者：
Zibing Zhang
Jing Lu
Qisheng Chen
V. Prasad
机构：
[1] Chinese Academy of Sciences,Institute of Mechanics
[2] Florida International University,Department of Mechanical and Materials Engineering
来源：
Acta Mechanica Sinica | 2006年 / 22卷
关键词：
Silicon carbide; Physical vapor transport; Thermal stress; Thermoelastic; Thermal expansion match;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.
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页码：40 / 45
页数：5
相关论文
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