Structural, optical, and electrical properties of In2S3:Sn thin films grown by chemical bath deposition on Pyrex

被引:0
作者
Mouna Kilani
Cathy Guasch
Michel Castagné
Najoua Kamoun-Turki
机构
[1] Faculté des Sciences de Tunis El Manar,Laboratoire de Physique de la Matière Condensée
[2] Unité Mixte de Recherche 5214 UM2-CNRS,Institut d’Electronique du Sud
[3] Université MontpellierII,undefined
来源
Journal of Materials Science | 2012年 / 47卷
关键词
Chemical Bath Deposition; In2S3 Film; Energy Dispersive Spectrum; Thermally Stimulate Current; In2S3 Thin Film;
D O I
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中图分类号
学科分类号
摘要
Sn-doped In2S3 thin films are deposited on Pyrex. Tin is incorporated in the solution using SnCl2·2H2O. The properties of the films are investigated by X-ray diffraction (XRD), atomic force microscopy, scanning electron microscopy, spectrophotometry, and thermally stimulated current (TSC) measurements. XRD analysis reveals that the films become almost amorphous when tin exceeds well determined optimum quantity. The investigation of optical properties shows that the band gap depends on the value of the Sn concentration. It is also observed that upon adding the optimum quantity of tin, the maximum of the TSC intensity increased by 2 orders of magnitude. These results are discussed with respect to introduce the effect of tin incorporated in the physical properties.
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页码:3198 / 3203
页数:5
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