Crystallisation kinetics and density profiles in ultra-thin hafnia filmsCrystallisation and structure of HfO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$\mathsf{_2}$\end{document} films

Crystallisation onset temperatures as a function of chlorine contamination have been determined by grazing incidence diffraction on as-deposited ultra-thin HfO2 films grown by Atomic Layer Deposition. The onset temperatures are positively correlated with chlorine content, suggesting defect-hindered crystallisation kinetics. Density profiles have been deduced by reflectometry measurements and a model independent analysis scheme. It is shown that the HfO2/SiO2-Si interface is electronically denser than the bulk of the HfO2 film.