Infrared semiconductor lasers for sensing and diagnostics

被引：0
|
作者：
J. Wagner
Ch. Mann
M. Rattunde
G. Weimann
机构：
[1] Fraunhofer-Institut für Angewandte Festkörperphysik,
来源：
Applied Physics A | 2004年 / 78卷
关键词：
Active Region; Design Concept; Semiconductor Laser; Relative Merit; Quantum Cascade Laser;
D O I：
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中图分类号：
学科分类号：
摘要：
There is an increasing demand for spectrally agile compact solid-state lasers for spectroscopic sensing and diagnostics. This demand can be met by III–V semiconductor-based lasers employing various design concepts for the active region. These concepts include, apart from the classical type-I interband diode laser, the type-II W-laser and the unipolar quantum cascade laser. Representative device data will be presented for these three types of lasers in conjunction with a discussion of the relative merits of the different active-region concepts.
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页码：505 / 512
页数：7
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