Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary

被引：0
作者：
Yongkook Park
Jinggang Lu
George Rozgonyi
机构：
[1] North Carolina State University,Department of Materials Science and Engineering
[2] Glory Silicon Energy Corporation,Research and Development Division
来源：
Electronic Materials Letters | 2010年 / 6卷
关键词：
silicon grain boundary; hydrogen segregation; thermal dissociation kinetics; multi-crystalline silicon; solar cells;
D O I：
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摘要：
In this article, segregation and thermal dissociation kinetics of hydrogen at a large-angle general grain boundary in crystalline silicon have been investigated using deuterium, a readily identifiable isotope that duplicates hydrogen chemistry. Segregation or trapping of introduced deuterium (hydrogen) was found to take place at the (110)/(001) Si grain boundary. The segregation coefficient (k) of deuterium (hydrogen) at the grain boundary was determined as k≈24±3 at 100°C. Thermal dissociation of deuterium (hydrogen) from the grain boundary obeyed first-order kinetics with an activation energy of ∼1.62 eV.
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页码：1 / 5
页数：4
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