Direct current electric field adjustable phase transformation behavior in (Pb,La)(Zr,Ti)O3 antiferroelectric thick films

被引：0

作者：

Xiujian Chou

Wenping Geng

Yongbo Lv

Jun Liu

Wendong Zhang

机构：

[1] North University of China Ministry of Education,Key Laboratory of Instrumentation Science and Dynamic Measurement

[2] Science and Technology on Electronic Test and Measurement Laboratory,undefined

来源：

Journal of Materials Science: Materials in Electronics | 2013年 / 24卷

关键词：

Direct Current Electric Field; Pure Perovskite Structure; Lead Acetate Trihydrate; PLZT Thin Film; Zirconium Propoxide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

(Pb,La)(Zr,Ti)O3 antiferroelectric 1.4 μm-thick films have been prepared on Pt (111)/Ti/SiO2/Si(100) substrates by sol–gel process. The structures and dielectric properties of the antiferroelectric thick films were investigated. The films displayed pure perovskite structure with (100)-preferred orientation. The surface of the films was smooth, compact and uniform. The antiferroelectric (AFE) characterization have been demonstrated by P (polarization)-E (electric field) and C(capacitance)-V (DC bias) curves. The AFE–ferroelectric (FE) and FE-to-paraelectric (PE) phase transition were also investigated as coupling functions of temperature and direct current electric field. With the applied field increased, the temperature of AFE-to-FE phase transition decreased and the FE-to-PE phase shifted to high temperature. The AFE-to-FE phase transition was adjustable by direct current electric field. (Pb,La) (Zr,Ti) O3 antiferroelectric films have broad application prospects in microelectromechanical systems because of the phase transition.

引用

页码：861 / 865

页数：4

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