Effect of the quantum-dot surface density in the active region on injection-laser characteristics

被引：0
|
作者：
A. R. Kovsh
A. E. Zhukov
A. Yu. Egorov
V. M. Ustinov
Yu. M. Shernyakov
M. V. Maksimov
A. F. Tsatsul’nikov
B. V. Volovik
A. V. Lunev
N. N. Ledentsov
P. S. Kop’ev
Zh. I. Alferov
D. Bimberg
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
[2] Technische Universität Berlin,Institut für Festkörperphysik
来源：
Semiconductors | 1998年 / 32卷
关键词：
Radiation; Comparative Analysis; Active Region; Magnetic Material; Maximum Output;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new method of increasing the surface density of self-organized semiconductor quantum dots formed by molecular-beam epitaxy is proposed. A comparative analysis of the characteristics of injection lasers based on quantum-dot arrays with different surface density is made. It is shown that the use of quantum-dot arrays of higher density makes it possible to decrease substantially the threshold current density in the region of large losses and to increase the maximum gain and the maximum output radiation power.
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页码：997 / 1000
页数：3
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