Ion-Beam Deposition of Thin AlN Films on Al2O3 Substrate

被引：0

作者：

L. S. Lunin

O. V. Devitskii

I. A. Sysoev

A. S. Pashchenko

I. V. Kas’yanov

D. A. Nikulin

V. A. Irkha

机构：

[1] Federal Research Center,

[2] Southern Scientific Center of the Russian Academy of Sciences,undefined

[3] Platov South Russian State Polytechnic University,undefined

[4] North Caucasus Federal University,undefined

来源：

Technical Physics Letters | 2019年 / 45卷

关键词：

ion-beam deposition; wide-bandgap semiconductors; aluminum nitride; gallium nitride; sapphire.;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1237 / 1240

页数：3

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