Effect of Partial Replacement of Retort with an Insulation Material on Mc-Silicon Grown in Directional Solidification Furnace: Numerical Modeling

In this paper, the transient global numerical simulation was used in order to study the four types of insulation surrounding the retort within directional solidification furnace which are the conventional retort, insulation inserted in bottom, centre, and top of the retort respectively. The m/c interface and thermal stress can determine the quality of the ingot which is directional solidificationally grown. The evolution of m/c interface during the growth and thermal stress have been simulated within the grown ingot. The observed results shows that the ingot grown by the directional solidification furnace having insulation at the centre of the retort has less thermal stress and slightly convex melt crystal interface as compared to all other modified retorts which is beneficial for growing high quality ingot.