IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing

[1] Sun Ch.(2015)Single-chip microprocessor that communicates directly using light Nature 528 534-538

[2] Wade M. T.(2021)Perspective on the future of silicon photonics and electronics Appl. Phys. Lett. 118 220501-23

[3] Lee Yu.(2010)Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence Semiconductors 44 1-894

[4] Orcutt J. S.(2021)Effect of additional implantation with oxygen ions on the dislocation-related luminescence in silicon-containing oxygen precipitates Semiconductors 55 891-636

[5] Alloatti L.(2021)Effect of compressive and stretching strains on hte dislocation luminescence spectrum in silicon Semiconductors 55 633-437

[6] Georgas M. S.(2010)1.5-1.6 Semiconductors 44 432-6733

[7] Waterman A. S.(2007)Point defect engineered Si sub-bandgap light-emitting diode Opt. Express 15 6727-16072

[8] Shainline J. M.(2020)Optimization of photoluminescence from W centers in silicon-on-insulator Opt. Express 28 16057-599

[9] Avizienis R. R.(1976)Recombination radiation on dislocations in silicon JETP Lett. 23 597-10526

[10] Lin S.(1995)Dislocation-related electroluminescence at room temperature in plastically deformed silicon Phys. Rev. B 51 10520-2108

[1] Sun Ch.(2015)Single-chip microprocessor that communicates directly using light Nature 528 534-538

[2] Wade M. T.(2021)Perspective on the future of silicon photonics and electronics Appl. Phys. Lett. 118 220501-23

[3] Lee Yu.(2010)Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence Semiconductors 44 1-894

[4] Orcutt J. S.(2021)Effect of additional implantation with oxygen ions on the dislocation-related luminescence in silicon-containing oxygen precipitates Semiconductors 55 891-636

[5] Alloatti L.(2021)Effect of compressive and stretching strains on hte dislocation luminescence spectrum in silicon Semiconductors 55 633-437

[6] Georgas M. S.(2010)1.5-1.6 Semiconductors 44 432-6733

[7] Waterman A. S.(2007)Point defect engineered Si sub-bandgap light-emitting diode Opt. Express 15 6727-16072

[8] Shainline J. M.(2020)Optimization of photoluminescence from W centers in silicon-on-insulator Opt. Express 28 16057-599

[9] Avizienis R. R.(1976)Recombination radiation on dislocations in silicon JETP Lett. 23 597-10526

[10] Lin S.(1995)Dislocation-related electroluminescence at room temperature in plastically deformed silicon Phys. Rev. B 51 10520-2108