Early stages of oxygen precipitation in silicon: The effect of hydrogen

被引：0
作者：
V. P. Markevich
L. I. Murin
J. L. Lindström
M. Suezawa
机构：
[1] Belarussian Academy of Sciences,Institute of Solid
[2] Lund University,State and Semiconductor Physics
[3] Tohoku University,Department of Solid State Physics
来源：
Semiconductors | 2000年 / 34卷
关键词：
Oxygen; Hydrogen; Precipitation; Silicon; Heat Treatment;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The formation of small oxygen clusters upon heat treatment at 280–375°C was studied in crystalline silicon doped with hydrogen by high-temperature in-diffusion. The presence of hydrogen in concentrations of 1015–1016 cm−3 significantly enhances (by up to a factor of 106 at T≤300°C) the oxygen diffusivity in Si crystals. Possible mechanisms of interaction between O and H impurity atoms and the origin of hydrogen-enhanced oxygen diffusion in silicon are discussed.
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页码：998 / 1003
页数：5
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