Multiferroic and resistive switching behaviors in BiFe0.95Cr0.05O3 thin films deposited on Pt/Ti/SiO2/Si substrates

被引：0
作者：
B. C. Luo
J. Wang
X. S. Cao
K. X. Jin
C. L. Chen
机构：
[1] Northwestern Polytechnical University,Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science
[2] Changzhou University,School of Mathematics and Physics
来源：
Applied Physics A | 2013年 / 113卷
关键词：
Oxygen Vacancy; Domain Wall; Resistive Switching; Magnetic Force Microscopy; Ferroelectric Domain;
D O I：
暂无
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学科分类号：
摘要：
Multiferroic and resistive switching properties of single-phase polycrystalline perovskite BiFe0.95Cr0.05O3 (BFCO) thin films grown on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering were investigated. The BFCO film shows ferroelectric and magnetic properties simultaneously at room temperature, and also exhibits a good piezoelectric property with remanent effective piezoelectric coefficient d33,f∼55±4 pm/V. An obviously resistive switching behavior was observed in the BFCO thin film at room temperature, which was discussed by the filamentary conduction mechanism associated with the redistribution of oxygen vacancies.
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页码：779 / 785
页数：6
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