CMOS-compatible graphene photodetector covering all optical communication bands

被引:1
作者
Andreas Pospischil
Markus Humer
Marco M. Furchi
Dominic Bachmann
Romain Guider
Thomas Fromherz
Thomas Mueller
机构
[1] Vienna University of Technology,
[2] Institute of Photonics,undefined
[3] Johannes Kepler University Linz,undefined
[4] Institut für Halbleiter und Festkörperphysik,undefined
来源
Nature Photonics | 2013年 / 7卷
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摘要
Optical interconnects are becoming attractive alternatives to electrical wiring in intra- and interchip communication links. Particularly, the integration with silicon complementary metal–oxide semiconductor (CMOS) technology has received considerable interest because of the ability of cost-effective integration of electronics and optics on a single chip1. Although silicon enables the realization of optical waveguides2 and passive components3, the integration of another, optically absorbing, material is required for photodetection. Traditionally, germanium4 or compound semiconductors5 are used for this purpose; however, their integration with silicon technology faces major challenges. Recently, graphene6 emerged as a viable alternative for optoelectronic applications7, including photodetection8. Here, we demonstrate an ultra-wideband CMOS-compatible photodetector based on graphene. We achieved a multigigahertz operation over all fibre-optic telecommunication bands beyond the wavelength range of strained germanium photodetectors9, the responsivity of which is limited by their bandgap. Our work complements the recent demonstration of a CMOS-integrated graphene electro-optical modulator10, and paves the way for carbon-based optical interconnects.
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页码:892 / 896
页数:4
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共 82 条
[1]  
Jalali B(2004)Silicon photonics J. Lightwave Technol. 24 4600-4615
[2]  
Fathpour S(2004)Losses in single-mode silicon-on-insulator strip waveguides and bends Opt. Express 12 1622-1631
[3]  
Vlasov YA(2006)Compact wavelength-selective functions in silicon-on-insulator photonic wires IEEE J. Sel. Top. Quant. Electron. 12 1394-11401
[4]  
McNab SJ(2009)Ultra-low capacitance and high speed germanium photodetectors on silicon Opt. Express 17 7901-7906
[5]  
Bogaerts W(2007)A hybrid AlGaInAs–silicon evanescent waveguide photodetector Opt. Express 15 6044-6052
[6]  
Chen L(2004)Electric field effect in atomically thin carbon films Science 306 666-669
[7]  
Lipson M(2010)Graphene photonics and optoelectronics Nature Photon. 4 611-622
[8]  
Park H(2010)Graphene photodetectors for high-speed optical communications Nature Photon. 4 297-301
[9]  
Novoselov KS(2005)High-performance, tensile-strained Ge p–i–n photodetectors on a Si platform Appl. Phys. Lett. 87 103501-67
[10]  
Bonaccorso F(2011)A graphene-based broadband optical modulator Nature 474 64-490