Recrystallization and grain growth of cold-drawn gold bonding wire

被引:0
作者
J. -H. Cho
Y. W. Kim
K. H. Oh
J. -S. Cho
J. -T. Moon
J. Lee
Y. W. Cho
A. D. Rollett
机构
[1] Seoul National University,the School of Materials Science and Engineering
[2] MKE Electronics,the Nano
[3] Materials Science and Technology Division,materials Research Center
[4] KIST,the Materials Science and Engineering Department
[5] Carnegie Mellon University,undefined
来源
Metallurgical and Materials Transactions A | 2003年 / 34卷
关键词
Material Transaction; Misorientation Angle; Bonding Wire; Coincident Site Lattice; Gold Wire;
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摘要
Recrystallization and grain growth of gold bonding wire have been investigated with electron back-scatter diffraction (EBSD). The bonding wires were wire-drawn to an equivalent strain greater than 11.4 with final diameter between 25 and 30 µm. Annealing treatments were carried out in a salt bath at 300 °C, and 400 °C for 1, 10, 60 minutes, and 1 day. The textures of the drawn gold wires contain major 〈111〉, minor 〈100〉, and small fractions of complex fiber components. The 〈100〉 oriented regions are located in the center and surface of the wire, and the complex fiber components are located near the surface. The 〈111〉 oriented regions occur throughout the wire. Maps of the local Taylor factor can be used to distinguish the 〈111〉 and 〈100〉 regions. The 〈111〉 oriented grains have large Taylor factors and might be expected to have higher stored energy as a result of plastic deformation compared to the 〈100〉 regions. Both 〈111〉 and 〈100〉 grains grow during annealing. In particular, 〈100〉 grains in the surface and the center part grow into the 〈111〉 regions at 300 °C and 400 °C. Large misorientations (angles >40 deg) are present between the 〈111〉 and 〈100〉 regions, which means that the boundaries between them are likely to have high mobility. Grain average misorientation (GAM) is greater in the 〈111〉 than in the 〈100〉 regions. It appears that the stored energy, as indicated by geometrically necessary dislocation content in the subgrain structure, is larger in the 〈111〉 than in the 〈100〉 regions.
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页码:1113 / 1125
页数:12
相关论文
共 56 条
[1]  
Ramsey T.H.(1973)undefined Solid State Technol. 16 43-47
[2]  
Omiyama S.(1980)undefined Gold Bull. 15 43-43
[3]  
Fukui Y.(1980)undefined Solid State Technol. 23 84-91
[4]  
Gehman B.L.(1959)undefined Trans, TMS-AIME 215 119-27
[5]  
Aust K.T.(1975)undefined Z. Metallkd. 66 533-39
[6]  
Rutter J.W.(1988)undefined Scripta Metall. 22 501-05
[7]  
Fridman E.M.(1986)undefined DVS Berichte 102 69-102
[8]  
Kopezky C.V.(1986)undefined Scripta Metall. 20 1601-05
[9]  
Shvindlerman L.S.(1997)undefined J. Mater. Processing Technol. 68 288-93
[10]  
Busch K.(1964)undefined Z. Metallkd. 55 600-04