Influence of the external deformation on the polarization of hot photoluminescence of the acceptor-conduction band in cubic semiconductors

The uniaxial deformation, varying the wave functions and energies of acceptor sublevels, leads to an essential change in the polarization of hot photoluminescence in semiconductors. The polarization characteristics of photoluminescence caused by recombination of hot and thermalized electrons with the holes bound at shallow-level acceptors with the simultaneous effect of the external magnetic field and uniaxial deformation have been calculated. It has been shown that the comparison of theoretical and experimental results will make it possible to refine some parameters of impurities in crystals.