Ge-on-Si for Si-based integrated materials and photonic devices

被引：11

作者：

Hu W. ^{[1
]}

Cheng B. ^{[1
]}

Xue C. ^{[1
]}

Su S. ^{[1
]}

Xue H. ^{[1
]}

Zuo Y. ^{[1
]}

Wang Q. ^{[1
]}

机构：

[1] State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing

来源：

Frontiers of Optoelectronics | 2012年 / 5卷 / 1期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

Ge; optoelectronic integration; photonic device;

D O I：

10.1007/s12200-012-0200-2

中图分类号：

学科分类号：

摘要：

This paper reviews the recent progress in photonic devices application of Ge-on-Si. Ge-on-Si materials and optical devices are suitable candidates for Si-based optoelectronic integration because of the mature epitaxial technique and the compatibility with Si complementary metal-oxide-semiconductor (CMOS) technology. Recently, the realities of electric-pump Ge light emitting diode (LED) and optical-pump pulse Ge laser, Ge quantum well modulator based on quantum Stark confined effect, waveguide Ge modulator based on Franz-Keldysh (FK) effect, and high performance near-infrared Ge detector, rendered the Si-based optoelectronic integration using Ge photonic devices. Ge-on-Si material is also an important platform to grow other materials on it for Sibased optoelectronic integration. InGaAs and GeSn have been grown on the Ge-on-Si. InGaAs LED and GeSn photodetector have been successfully fabricated as well. © 2012 Higher Education Press and Springer-Verlag Berlin Heidelberg.

引用

页码：41 / 50

页数：9

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