Tunneling characteristics of a double-barrier magnetic junction

被引：0
作者：
N. Kh. Useinov
机构：
[1] Kazan (Volga Region) Federal University,
来源：
Physics of the Solid State | 2013年 / 55卷
关键词：
Applied Voltage; Tunnel Junction; Resonant Condition; Resonant Tunneling; Ferromagnetic Layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The spin-polarized current through a planar double-barrier magnetic tunnel junction has been calculated using the quasi-classical model. The coefficients of electron transmission through the barriers have been calculated in terms of the quantum theory. The dependences of the transmission coefficients, spinpolarized currents, and tunneling magnetoresistance on the applied voltage under resonant conditions have been shown. Under non-resonant conditions, the tunneling magnetoresistance has been compared with the experimental data.
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页码：659 / 667
页数：8
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