Impact of process variation on the RF and stability performance of SiGe source-based epitaxial layer TFET

被引：0
作者：
Radhe Gobinda Debnath
Srimanta Baishya
机构：
[1] National Institute of Technology,
来源：
Journal of Computational Electronics | 2022年 / 21卷
关键词：
Epitaxial layer; TFET; Non-quasi-static (NQS); Radio frequency (RF); Stability factor; Process variation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this study, the RF and stability aspects of SiGe source-based epitaxial layer tunnel field-effect transistor (SiGe source ETLTFET) are explored by extracting the capacitances, cutoff frequency (fT), maximum oscillation frequency (fMAX), and stability factor (K) from the non-quasi-static (NQS) radio frequency model. The results reveal that SiGe source ETLTFET has a cutoff frequency of 21 GHz, a maximum oscillation frequency of 155 GHz, and is unconditionally stable from 30 GHz onwards. Thus, the proposed device exhibits superior RF performance and good stability in the RF range, making it appropriate for RF applications. The effect of fin height (Hfin), fin width (Wfin), gate oxide thickness (tox), epitaxial layer thickness (tepi), and gate–source overlap length (Lov) fluctuation caused by process variation is explored and determined to be relatively severe, and the allowable 3σ variation tolerance for the RFIC design is stated.
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页码：1150 / 1162
页数：12
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