Special features of generation-recombination processes in the p-n junctions based on HgMnTe

被引：0
|
作者：
L. A. Kosyachenko
S. É. Ostapov
Weiguo Sun
机构：
[1] Chernovtsy University,
[2] Luoyang Optoelectronics Institute,undefined
来源：
Semiconductors | 2000年 / 34卷
关键词：
Experimental Data; Recombination; Charge Carrier; Magnetic Material; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
New experimental data on the charge transport in p-n junctions based on Hg1−xMnxTe (x≈0.11) are reported. The experimental I-V characteristics are interpreted in terms of the Sah-Noyce-Shockley theory with allowance made for special features of recombination of the charge carriers in a narrow-gap semiconductor.
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页码：668 / 670
页数：2
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