Transport and ferromagnetism in InGaAs quantum well structures delta-doped with Mn

被引：0

作者：

P. V. Gurin

V. A. Kul’bachinskiĭ

Yu. A. Danilov

B. N. Zvonkov

B. A. Aronzon

A. B. Davydov

V. V. Ryl’kov

机构：

[1] Moscow State University,Nizhni Novgorod Research Physicotechnical Institute

[2] Nizhni Novgorod State University,undefined

[3] Russian Research Center “Kurchatov Institute”,undefined

来源：

Journal of Experimental and Theoretical Physics | 2007年 / 105卷

关键词：

73.63.Hs; 72.15.Gd; 73.50.Jt; 73.43.Qt; 72.25.-b;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Samples containing InGaAs quantum wells with p-type conductivity delta-doped by Mn were synthesized and studied. Magnetic moment measurements on a SQUID magnetometer revealed the presence of ferromagnetism at temperatures T from 4.2 to 400 K. Anomalous Hall effect caused by additional sample magnetization was observed at temperatures of from about 30 to 80 K. The Shubnikov-de Haas effect was recorded at 4.2 K. Negative magnetoresistance changed sign for positive at T ≈ 30 K as the temperature increased.

引用

页码：181 / 184

页数：3