Rapid curing of solution-processed zinc oxide films by pulse-light annealing for thin-film transistor applications

被引：0
作者：
Dong Wook Kim
Jaehoon Park
Jaeeun Hwang
Hong Doo Kim
Jin Hwa Ryu
Kang Bok Lee
Kyu Ha Baek
Lee-Mi Do
Jong Sun Choi
机构：
[1] Hongik University,Department of Electrical, Information and Control Engineering
[2] Hallym University,Department of Electronic Engineering
[3] Kyung Hee University,Department of Advanced Materials Engineering for Information & Electronics
[4] Electronics and Telecommunications Research Institute,IT Convergence Technology Research Laboratory
来源：
Electronic Materials Letters | 2015年 / 11卷
关键词：
thin-film transistor; oxide semiconductor; solution process; pulsed-light annealing;
D O I：
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学科分类号：
摘要：
In this study, a pulse-light annealing method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thinfilm transistors (TFTs). Transistors that were fabricated by the pulse-light annealing method, with the annealing being carried out at 90℃ for 15 s, exhibited a mobility of 0.05 cm2/Vs and an on/off current ratio of 106. Such electrical properties are quite close to those of devices that are thermally annealed at 165℃ for 40 min. X-ray photoelectron spectroscopy analysis of ZnO films showed that the activation energy required to form a Zn-O bond is entirely supplied within 15 s of pulse-light exposure. We conclude that the pulse-light annealing method is viable for rapidly curing solution-processable oxide semiconductors for TFT applications.
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页码：82 / 87
页数：5
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