Effect of Substrate on the Structure and Thermoelectric Properties of n-Type Bi2Te3−ySey Thin Films Prepared by Electrodeposition

被引:0
|
作者
Yiteng Jin
Wei Wang
机构
[1] Tianjin University,Department of Applied Chemistry, School of Chemical Engineering and Technology
来源
Journal of Electronic Materials | 2010年 / 39卷
关键词
Bi; Te; Se; thin films; electrodeposition; substrate; structure;
D O I
暂无
中图分类号
学科分类号
摘要
n-Type Bi2Te3−ySey thin films were prepared by potentiodynamic electrodeposition onto Au, Bi, and Bi2Te3−ySey substrates at room temperature. The electrochemical behaviors of Bi3+, HTeO2+, and H2SeO3 on different substrates were investigated by cyclic voltammetry. The morphology, composition, and structure of the films were studied by using environmental scanning electron microscopy (ESEM), energy-dispersive spectroscopy (EDS), and x-ray diffraction (XRD), respectively. The thermoelectric properties of n-type Bi2Te3−ySey films were determined by measuring the Seebeck coefficient (α) and electrical resistivity (ρ). The results showed that the composition and morphology of the films were sensitive to the substrate material. X-ray diffraction (XRD) analysis indicated that the preferred orientation of annealed films was affected by the substrate and that the film prepared on the Bi2Te3−ySey substrate exhibited the strongest (015) orientation, with rhombohedral structure. It was proved that the properties of the annealed films could be affected by the substrate and that the film with the highest power factor (P = α2/ρ) was obtained on the Bi2Te3−ySey substrate.
引用
收藏
页码:1469 / 1475
页数:6
相关论文
共 50 条
  • [1] Effect of Substrate on the Structure and Thermoelectric Properties of n-Type Bi2Te3-ySey Thin Films Prepared by Electrodeposition
    Jin, Yiteng
    Wang, Wei
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (09) : 1469 - 1475
  • [2] Electrodeposition of n-type Bi2Te3-ySey thermoelectric thin films on stainless steel and gold substrates
    Bu, Luxia
    Wang, Wei
    Wang, Hui
    APPLIED SURFACE SCIENCE, 2007, 253 (06) : 3360 - 3365
  • [3] Thermoelectric Properties of n-Type Bismuth Telluride (Bi2Te3) Thin Films Prepared by RF Sputtering
    Park, No-Won
    Ahn, Jay-Young
    Umar, Ahmad
    Yoon, Soon-Gil
    Lee, Sang-Kwon
    SCIENCE OF ADVANCED MATERIALS, 2016, 8 (06) : 1172 - 1176
  • [4] Effect of the substrate on the electrodeposition of Bi2Te3-ySey thin films
    Bu, Luxia
    Wang, Wei
    Wang, Hui
    MATERIALS RESEARCH BULLETIN, 2008, 43 (07) : 1808 - 1813
  • [5] Electrochemically deposited thermoelectric n-type Bi2Te3 thin films
    Yoo, BY
    Huang, CK
    Lim, JR
    Herman, J
    Ryan, MA
    Fleurial, JP
    Myung, NV
    ELECTROCHIMICA ACTA, 2005, 50 (22) : 4371 - 4377
  • [6] Thermoelectric properties of Bi2Te3 films by constant and pulsed electrodeposition
    Cristina V. Manzano
    Adriana A. Rojas
    Michelle Decepida
    Begoña Abad
    Yazmin Feliz
    Olga Caballero-Calero
    Diana-Andra Borca-Tasciuc
    Marisol Martin-Gonzalez
    Journal of Solid State Electrochemistry, 2013, 17 : 2071 - 2078
  • [7] Effect of Sputtering Process Parameters on the Thermoelectric Properties of P and N-type Bi2Te3 Films
    Arina
    Chow, Hui Fan Shermin
    Bari, Shamira Banu Abdul
    Lin, Chia Ai
    Ko, San Ye
    Khong, Samuel
    Sim, Jonathan
    Ezhilvalavan, S.
    Jan, Ma
    Hoon, Heng Hui
    ADVANCED STRUCTURAL AND FUNCTIONAL MATERIALS FOR PROTECTION, 2012, 185 : 94 - +
  • [8] Electrodeposition of thermoelectric Bi2Te3 thin films with added surfactant
    Song, Youngsup
    Yoo, In-Joon
    Heo, Na-Ri
    Lim, Dong Chan
    Lee, Dongyun
    Lee, Joo Yul
    Lee, Kyu Hwan
    Kim, Kwang-Ho
    Lim, Jae-Hong
    CURRENT APPLIED PHYSICS, 2015, 15 (03) : 261 - 264
  • [9] Effect of Initial Bulk Material Composition on Thermoelectric Properties of Bi2Te3 Thin Films
    A. V. Budnik
    E. I. Rogacheva
    V. I. Pinegin
    A. Yu. Sipatov
    A. G. Fedorov
    Journal of Electronic Materials, 2013, 42 : 1324 - 1329
  • [10] Electrodeposition of MWNT/Bi2Te3 Composite Thermoelectric Films
    Han Xu
    Wei Wang
    Journal of Electronic Materials, 2013, 42 : 1936 - 1945