Hysteresis of the current-voltage characteristics of porous-silicon light-emitting structures

被引：0
作者：
A. N. Laptev
A. V. Prokaznikov
N. A. Rud’
机构：
[1] Yaroslavl’ State University,
来源：
Technical Physics Letters | 1997年 / 23卷
关键词：
Silicon; Current Flow; Hysteresis Effect; Silicon Structure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new hysteresis effect is described in metal-porous-silicon-p-type silicon structures and a new model is proposed to describe current flow in these structures.
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页码：440 / 442
页数：2
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