Mathematical simulation of the processes of generation of "shock waves" in a two-dimensional electron gas in the channel of a ballistic field-effect transistor

被引：2
|
作者：
Semenikhin I.A. [1 ]
Vostrikova E.A. [2 ]
机构：
[1] Institute of Physics and Technology, Russian Academy of Sciences, Moscow
[2] Russian Research Center Kurchatov Institute, Moscow
来源：
Russian Microelectronics | 2010年 / 39卷 / 03期
关键词：
Shock Wave; Soliton; RUSSIAN Microelectronics; Field Effect Transistor; Dimensional Electron;
D O I：
10.1134/S1063739710030029
中图分类号：
学科分类号：
摘要：
The processes of formation of "shock waves" in a two-dimensional electron gas in the channel of a ballistic field-effect transistor are simulated numerically. The "shock waves" are generated due to the ac voltage applied to the gate of the transistor. The results of numerical simulation are used to analyze the structure of the "shock wave" front and the dependence of the structure on the dispersion and dissipation effects. © Pleiades Publishing, Ltd., 2010.
引用
收藏
页码：158 / 164
页数：6
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