Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices

被引：0
作者：
YuFei Cao
YanYong Li
YuanYuan Li
GuanNan Wei
Yang Ji
KaiYou Wang
机构：
[1] Chinese Academy of Sciences,The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors
来源：
Science China Physics, Mechanics & Astronomy | 2014年 / 57卷
关键词：
magnetic coupling; magnetoresistance; bilayer structure; annealing; anisotropic field;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of the GaMnAs layer with applying the out of plane magnetic field. After low temperature annealing, the magnetic easy axis of the AlGaMnAs layer switches from out of plane into in-plane and the interlayer coupling efficiency is reduced from up to 0.6 to less than 0.4. However, the magnetic coupling penetration depth for the annealed device is twice that of the as-grown bilayer device.
引用
收藏
页码：1471 / 1475
页数：4
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