Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structures

被引:0
作者
S. Kaschieva
S.N. Dmitriev
W. Skorupa
机构
[1] Bulgarian Academy of Sciences,Institute of Solid State Physics
[2] Joint Institute of Nuclear Research,Flerov Laboratory of Nuclear Reactions
[3] Forschungszentrum Rossendorf,Institute of Ion Beam Physics and Materials Research
来源
Applied Physics A | 2004年 / 78卷
关键词
Thermal Treatment; Oxide Layer; State Density; Interface State; Electron Irradiation;
D O I
暂无
中图分类号
学科分类号
摘要
Si-SiO2 structures irradiated with 11-MeV electrons for 10 s and then implanted with B+ ions with an energy of 10 keV at a dose of 1.0×1012 cm-2 through the oxide were annealed at different temperatures. MOS capacitors including such oxide layers were studied by quasi-static C/V and thermally stimulated current (TSC) methods. A comparison of the radiation defect annealing of double-treated (electron-irradiated and ion-implanted) samples and of implanted-only samples was carried out. It is shown that a preceding low-dose high-energy electron irradiation of the samples leads to a lowering of the annealing temperature of radiation defects introduced by ion implantation. After annealing at 500 °C for 15 min, no TSC spectra for the double-treated samples were observed. The spectra of the other samples (which were not previously irradiated) showed that after the same thermal treatment only some of the radiation defects introduced by ion implantation are annealed. The difference between the annealed interface state density of previously electron-irradiated and current MOS structures is also demonstrated. A possible explanation of the results is proposed .
引用
收藏
页码:607 / 610
页数:3
相关论文
共 29 条
  • [21] Ionization-induced annealing of defects in 3C-SiC: Ion channeling and positron annihilation spectroscopy investigations
    Sreelakshmi, N.
    Umapathy, G. R.
    Abhaya, S.
    David, C.
    Ojha, S.
    Amirthapandian, S.
    JOURNAL OF MATERIALS RESEARCH, 2023, 38 (05) : 1349 - 1363
  • [22] Radiation-induced defects in quartz. III. Single-crystal EPR, ENDOR and ESEEM study of a peroxy radical
    Mark J. Nilges
    Yuanming Pan
    Rudolf I. Mashkovtsev
    Physics and Chemistry of Minerals, 2009, 36 : 61 - 73
  • [23] Radiation-induced defects in quartz. III. Single-crystal EPR, ENDOR and ESEEM study of a peroxy radical
    Nilges, Mark J.
    Pan, Yuanming
    Mashkovtsev, Rudolf I.
    PHYSICS AND CHEMISTRY OF MINERALS, 2009, 36 (02) : 61 - 73
  • [24] Radiation-induced defects in thin Cu(In,Ga)Se2 films on exposure to high-energy electron irradiation
    A. V. Mudryi
    V. F. Gremenok
    A. V. Ivanyukovich
    M. V. Yakushev
    Ya. V. Feofanov
    Journal of Applied Spectroscopy, 2005, 72 (6) : 883 - 886
  • [25] Role of Temperature in the Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Charged Particles
    Kozlovski, V. V.
    Vasil'ev, A. E.
    Lebedev, A. A.
    Strel'chuk, A. M.
    Levinshtein, M. E.
    JOURNAL OF SURFACE INVESTIGATION, 2022, 16 (03): : 374 - 379
  • [26] Interaction of Radiation-Induced Self-Interstitials with Vacancy-Oxygen Related Defects VnO2 (n from 1 to 3) in Silicon
    Murin, Leonid I.
    Tolkacheva, Ekaterina A.
    Lastovskii, Stanislau B.
    Markevich, Vladimir P.
    Mullins, Jack
    Peaker, Anthony R.
    Svensson, Bengt G.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (10):
  • [27] Radiation-induced defects in 4H-and 6H-SiC epilayers studied by positron annihilation and deep-level transient spectroscopy
    Kawasuso, A
    Weidner, M
    Redmann, F
    Frank, T
    Krause-Rehberg, R
    Pensl, G
    Sperr, P
    Triftshäuser, W
    Itoh, H
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 489 - 492
  • [28] Effect of Nickel Concentration on Radiation-Induced Diffusion of Point Defects in High-Nickel Fe-Cr-Ni Model Alloys during Neutron and Electron Irradiation
    Sekio, Yoshihiro
    Sakaguchi, Norihito
    MATERIALS TRANSACTIONS, 2019, 60 (05) : 678 - 687
  • [29] Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeO x /(111) and (100) n-Ge MOS structures
    Han, Xueyang
    Chen, Chia-Tsong
    Ke, Mengnan
    Zhao, Ziqiang
    Toprasertpong, Kasidit
    Takenaka, Mitsuru
    Takagi, Shinichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SC)