Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

被引：0
作者：
Yuanjie Lv
Zhaojun Lin
Lingguo Meng
Chongbiao Luan
Zhifang Cao
Yingxia Yu
Zhihong Feng
Zhanguo Wang
机构：
[1] Shandong University,School of Physics
[2] Hebei Semiconductor Research Institute,Science and Technology on ASIC Laboratory
[3] Chinese Academy of Sciences,Laboratory of Semiconductor Materials Science, Institute of Semiconductors
来源：
Nanoscale Research Letters | / 7卷
关键词：
electron mobility; drain-to-source distance; AlGaN/GaN heterostructures; polarization Coulomb field scattering;
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摘要：
Using measured capacitance-voltage curves with different gate lengths and current–voltage characteristics at low drain-to-source voltage for the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) of different drain-to-source distances, we found that the dominant scattering mechanism in AlGaN/AlN/GaN HFETs is determined by the ratio of gate length to drain-to-source distance. For devices with small ratio (here, less than 1/2), polarization Coulomb field scattering dominates electron mobility. However, for devices with large ratio (here, more than 1/2), longitudinal optical (LO) phonon scattering and interface roughness scattering are dominant. The reason is closely related to polarization Coulomb field scattering.
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