A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates

被引：0

作者：

S. A. Kukushkin

Sh. Sh. Sharofidinov

机构：

[1] Institute of Mechanical Engineering,

[2] Russian Academy of Sciences,undefined

[3] Ioffe Institute,undefined

[4] Russian Academy of Sciences,undefined

来源：

Physics of the Solid State | 2019年 / 61卷

关键词：

bulk aluminum nitride; bulk AlGaN; bulk gallium nitride; silicon carbide on silicon; epitaxy; high-energy-gap semiconductors; thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：2342 / 2347

页数：5

共 98 条

[1]

Ishikawa H.(1999)Solid State Jpn. J. Appl. Phys. 38 L492-undefined

[2]

Zhao G.-Y.(2015)undefined Mater. Phys. Mech. 22 53-undefined

[3]

Nakada N.(2017)undefined J. Phys.: Conf. Ser. 917 032028-undefined

[4]

Egawa T.(2018)undefined Thin Solid Films 646 158-undefined

[5]

Jimbo T.(2006)undefined Nature (London, U.K.) 441 325-undefined

[6]

Umeno M.(2007)undefined J. Appl. Phys. 101 123103-undefined

[7]

Sharofidinov Sh. Sh.(2017)undefined Vacuum 141 139-undefined

[8]

Golovatenko A. A.(2015)undefined Appl. Phys. Lett. 107 151103-undefined

[9]

Nikitina I. P.(2017)undefined Appl. Phys. Lett. 111 111101-undefined

[10]

Seredova N. V.(2005)undefined J. Cryst. Growth 281 93-undefined