Fabrication and Simulation of InGaAs Field-Effect Transistors with II–VI Tunneling Insulators

This study shows the use of a high-κ ZnS/ZnMgS/ZnS heteroepitaxial tunneling layer in an InGaAs field-effect transistor. Experimental fabrication and simulation of this semiconductor structure show promise of reducing threshold voltage variation by replacing silicon and hafnium oxides as a gate insulator. The II–VI tunneling insulator is grown on an InGaAs substrate using ultraviolet-irradiated metalorganic vapor-phase epitaxy. GeOx-Ge cladded quantum dots are self-assembled to form the gate material. The gate consists of two self-assembled individually cladded quantum dot layers which allow multilogic behavior. Simulations calculated by solving the Schrödinger and Poisson equations self-consistently confirm experimental ID–VD characteristics and show the electron distribution in an inversion channel/quantum well under different gate voltage bias values.