Study of the thermally processed lanthanum hexaboride surface

被引：0

作者：

A. S. Igityan

Y. A. Kafadaryan

N. R. Aghamalyan

S. I. Petrosyan

G. R. Badalyan

I. A. Gambaryan

R. K. Hovsepyan

H. S. Semerjian

机构：

[1] NAS RA,Institute for Physical Research

[2] Yerevan State University,undefined

来源：

Journal of Contemporary Physics (Armenian Academy of Sciences) | 2014年 / 49卷

关键词：

oxide and hexaboride of lanthanum; electrical conductance mechanism;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We study the possibility to grow lanthanum oxide (La2O3) on the surface of lanthanum hexaboride (LaB6) with (100)- and (100/110)-orientation in conditions of thermal annealing, in order to produce a metal-oxide-metal structure. Electron microscopic images, X-ray and optical spectra revealed a La2O3 layer of cubic symmetry. The features of the current-voltage and capacitance-voltage characteristics of the Al/La2O3/(100)LaB6 and Al/La2O3/(100/110)LaB6 structures are analyzed. The electrical conductance mechanism is explained on the basis of space-charge limited current.

引用

页码：277 / 285

页数：8

共 76 条

[1]

Yorisaki T(2012)undefined Surf. Sci. 606 247-undefined

[2]

Tillekaratne A(2012)undefined Sci. Technol. Adv. Mater. 13 023002-undefined

[3]

Ren Y(2004)undefined J. Europ. Ceramic Soc. 24 3235-undefined

[4]

Moriya Y(2011)undefined Appl. Phys. Lett. 99 132902-undefined

[5]

Oshima C(2010)undefined J. Appl. Phys. 108 114107-undefined

[6]

Otani S(2012)undefined Materials 5 1413-undefined

[7]

Trenary M(2005)undefined Microelectronics Reliability 45 937-undefined

[8]

Trenary M(2013)undefined J. Contemp. Phys. (Armenian Ac. Sci.) 48 128-undefined

[9]

Wen C-H(2009)undefined Appl. Surf. Sci. 255 8319-undefined

[10]

Wu T-M(2009)undefined J. Appl. Phys. 105 061625-undefined

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