PECVD silicon carbide surface micromachining technology and selected MEMS applications

被引：0
作者：
Vijayekumar Rajaraman
Lukasz S. Pakula
Heng Yang
Patrick J. French
Pasqualina M. Sarro
机构：
[1] Delft University of Technology (TU Delft),Department of Microelectronics, EI Laboratory, Faculty of EEMCS
[2] Delft University of Technology (TU Delft),Department of Microelectronics, ECTM Laboratory, Faculty of EEMCS
[3] State Key Laboratory of Transducer Technology,undefined
[4] Shanghai Institute of Microsystem and Information Technology (SIMIT-CAS),undefined
来源：
International Journal of Advances in Engineering Sciences and Applied Mathematics | 2010年 / 2卷 / 1-2期
关键词：
Silicon carbide (SiC); Microelectromechanical systems (MEMS); Micromachining; Pressure sensor; Accelerometer; RF switch; Wafer-level packaging (WLP); Thin film encapsulation (TFE);
D O I：
10.1007/s12572-010-0020-9
中图分类号：
学科分类号：
摘要：
Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with integrated circuits. In this paper we present a generic surface micromachining technology developed using a stress-optimised PECVD SiC as the structural and encapsulation material for MEMS. An overview of selected MEMS applications realised, at DIMES Technology Center (DTC) of TU Delft, using the PECVD SiC surface micromachining technology is provided. Presented MEMS examples include—a pressure sensor, wafer-level thin-film packaging, RF switch and accelerometers. Potential applications for the presented technology include automotive, industrial and medical systems, where devices are often subjected to harsh environments.
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页码：28 / 34
页数：6
相关论文
共 28 条
  • [1] Jiang L.(2009)A review of silicon carbide development in MEMS applications Int. J. Comput. Mater. Sci. Surf. Eng. (IJCMSSE) 2 225-240
  • [2] Cheung R.(1998)PECVD silicon carbide as a chemically resistant material for micromachined transducers Sens. Actuators A 70 48-55
  • [3] Flannery A.F.(1999)SiC MEMS: opportunities and challenges for applications in harsh environments Thin Solid Films 355–356 518-524
  • [4] Mourlas N.J.(2000)Silicon carbide as a new MEMS technology Sens. Actuators A 82 210-218
  • [5] Storment C.W.(1998)Low-stress PECVD SiC thin films for IC-compatible microstructures Sens. Actuators A 67 175-180
  • [6] Tsai S.(2004)Fabrication of a CMOS compatible pressure sensor for harsh environments J. Micromech. Microeng. 14 1478-1483
  • [7] Tan S.H.(1998)Bulk micromachining of silicon Proc IEEE 86 1536-1551
  • [8] Heck J.(2008)Wafer level packaging of MEMS J. Micromech. Microeng. 18 1-13
  • [9] Monk D.(undefined)undefined undefined undefined undefined-undefined
  • [10] Kim T.(undefined)undefined undefined undefined undefined-undefined
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