Effect of surface roughness on quantum carrier transport in ultrathin films

被引：0
作者：
Ananiev S.D. [1 ]
V'yurkov V.V. [1 ]
Orlikovsky A.A. [1 ]
机构：
[1] Institute of Physics and Technology, Russian Academy of Sciences, Moscow
来源：
Russian Microelectronics | 2004年 / 33卷 / 3期
关键词：
Experimental Data; Surface Roughness; Metal Film; Carrier Transport; Surface Irregularity;
D O I：
10.1023/B:RUMI.0000026173.74951.aa
中图分类号：
学科分类号：
摘要：
A theoretical study is reported of the carrier transport in an ultrathin metal film and a quantum-well layer subject to scattering by surface irregularities. A consistent quantum-mechanical approach to the problem is developed. Power-law approximations with different exponents are obtained to the conductivity-thickness relationship. The results are compared with previously published experimental data.
引用
收藏
页码：159 / 164
页数：5
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