Effect of surface roughness on quantum carrier transport in ultrathin films

被引：0

作者：

Ananiev S.D. ^{[1
]}

V'yurkov V.V. ^{[1
]}

Orlikovsky A.A. ^{[1
]}

机构：

[1] Institute of Physics and Technology, Russian Academy of Sciences, Moscow

来源：

Russian Microelectronics | 2004年 / 33卷 / 3期

关键词：

Experimental Data; Surface Roughness; Metal Film; Carrier Transport; Surface Irregularity;

D O I：

10.1023/B:RUMI.0000026173.74951.aa

中图分类号：

学科分类号：

摘要：

A theoretical study is reported of the carrier transport in an ultrathin metal film and a quantum-well layer subject to scattering by surface irregularities. A consistent quantum-mechanical approach to the problem is developed. Power-law approximations with different exponents are obtained to the conductivity-thickness relationship. The results are compared with previously published experimental data.

引用

页码：159 / 164

页数：5

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