Effect of B atoms on the properties of InAs quantum dots in the GaAs matrix

被引：0
作者：
V. M. Danil’tsev
N. V. Vostokov
Yu. N. Drozdov
M. N. Drozdov
A. V. Murel’
D. A. Pryakhin
O. I. Khrykin
V. I. Shashkin
机构：
[1] Russian Academy of Sciences,Institute for Physics of Microstructures
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2008年 / 2卷
关键词：
Boron; GaAs; Surface Investigation; Neutron Technique; Island Growth;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of B dopants on the properties of InAs quantum dots is studied experimentally. It is shown that the incorporation of B atoms decreases the integral amount of InAs that is needed to form islands according to the Stransky-Krastanov mechanism and leads to an increase in the density of dots. At the same time, it is discovered that the sensitivity of InAs quantum dots to annealing increases, which leads to the degradation of the optical properties of these quantum dots during growth of covering layers.
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页码：514 / 517
页数：3
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