Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

The photoluminescence spectra of samples of the solid solution In(0.5)Ga(0.5)P before and after implantation of high-energy nitrogen ions to doses of 1011−5×1012 cm−2 shows that the photoluminescence of the implanted (and annealed) samples may be the result of the formation of essentially one-dimensional semiconductor structures along the individual ion tracks.