A critical analysis of investigation of deep levels in high-resistivity CdS single crystals by photoelectric transient spectroscopy

被引：0
作者：
A. P. Odrinskii
机构：
[1] Belarussian Academy of Sciences,Institute of Technical Acoustics
来源：
Semiconductors | 2004年 / 38卷
关键词：
Spectroscopy; Computer Simulation; Magnetic Material; Critical Analysis; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The investigation of high-resistivity CdS single crystals by photoelectric deep-level transient spectroscopy (PEDLTS) is discussed. Computer simulation of the experiment is carried out. This simulation enables us to compare the results obtained by the PEDLTS and thermally stimulated conductivity methods. The experimental potentials of these methods are compared.
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页码：298 / 303
页数：5
相关论文
共 45 条
[1]  
Hurter Ch.(1978)undefined Appl. Phys. Lett. 32 821-undefined
[2]  
Boulon M.(1978)undefined J. Electrochem. Soc. 78 32-undefined
[3]  
Mitonnear A.(1986)undefined Fiz. Tekh. Poluprovodn. (Leningrad) 20 1428-undefined
[4]  
Bois D.(1983)undefined Jpn. J. Appl. Phys. 22 621-undefined
[5]  
Martin G. M.(1986)undefined J. Phys. D: Appl. Phys. 19 57-undefined
[6]  
Boisin D.(1994)undefined Fiz. Tekh. Poluprovodn. (St. Petersburg) 28 721-undefined
[7]  
Omel’yanovskii É. M. M.(1987)undefined Jpn. J. Appl. Phys. 26 377-undefined
[8]  
Polyakov A. Ya.(1998)undefined J. Appl. Phys. 84 5554-undefined
[9]  
Rytov N. S.(2000)undefined Appl. Phys. Lett. 77 3212-undefined
[10]  
Raikhshtein V. I.(1974)undefined J. Appl. Phys. 45 3023-undefined
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