Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD

被引：0

作者：

Shubhra S. Pasayat

Cory Lund

Yusuke Tsukada

Massimo Catalano

Luhua Wang

Moon J. Kim

Shuji Nakamura

Stacia Keller

Umesh K. Mishra

机构：

[1] University of California,Department of Electrical and Computer Engineering

[2] Santa Barbara,Istituto Microelettronica e Microsistemi, Consiglio Nazionale delle Ricerche

[3] Via Monteroni,Materials Department

[4] Department of Materials Science and Engineering,undefined

[5] University of Texas Dallas,undefined

[6] University of California,undefined

[7] Santa Barbara,undefined

来源：

Journal of Electronic Materials | 2020年 / 49卷

关键词：

Indium gallium nitride (InGaN); gallium nitride (GaN); nitrogen polar (N-polar); metal-organic chemical vapor deposition (MOCVD); digital InGaN growth;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Smooth 200 nm thick N-polar InGaN films were grown by metal–organic chemical vapor deposition (MOCVD) on sapphire using a digital approach consisting of a constant In, Ga, and N precursor flow with pulsed injection of H2 into the N2 carrier gas. Using this growth scheme, the H2 injection time was altered and the effect on the morphology and indium incorporation in the films observed. The effect of periodic insertion of additional GaN inter-layers on the surface morphology of the InGaN layers was also studied.

引用

页码：3450 / 3454

页数：4

共 50 条

[1] Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD
Pasayat, Shubhra S.
Lund, Cory
Tsukada, Yusuke
Catalano, Massimo
Wang, Luhua
Kim, Moon J.
Nakamura, Shuji
Keller, Stacia
Mishra, Umesh K.
JOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (06) : 3450 - 3454
[2] In situ stress measurements during MOCVD growth of thick N-polar InGaN
Al Balushi, Zakaria Y.
Redwing, Joan M.
JOURNAL OF APPLIED PHYSICS, 2017, 122 (08)
[3] Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates
Lund, Cory
Hestroffer, Karine
Hatui, Nirupam
Nakamura, Shuji
DenBaars, Steven P.
Mishra, Umesh K.
Keller, Stacia
APPLIED PHYSICS EXPRESS, 2017, 10 (11)
[4] Optimization of N-polar GaN growth on bulk GaN substrate by MOCVD
Wang, Xuewei
Xu, Shengrui
Du, Jinjuan
Peng, Ruoshi
Fan, Xiaomeng
Zhao, Ying
Li, Wen
Zhang, Jincheng
Hao, Yue
MATERIALS LETTERS, 2019, 253 : 314 - 316
[5] MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures
Fichtenbaum, N. A.
Neufeld, C. J.
Schaake, C.
Wu, Y.
Wong, M. H.
Grundmann, M.
Keller, S.
DenBaars, S. P.
Speck, J. S.
Mishra, U. K.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (06): : 1802 - 1805
[6] Growth and characterization of N-polar InGaN/GaN multiquantum wells
Keller, S.
Fichtenbaum, N. A.
Furukawa, M.
Speck, J. S.
DenBaars, S. P.
Mishra, U. K.
APPLIED PHYSICS LETTERS, 2007, 90 (19)
[7] The role of AlN thickness in MOCVD growth of N-polar GaN
Li, Yangfeng
Hu, Xiaotao
Song, Yimeng
Su, Zhaole
Wang, Wenqi
Jia, Haiqiang
Wang, Wenxin
Jiang, Yang
Chen, Hong
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 884
[8] Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films
Hatui, Nirupam
Krishna, Athith
Pasayat, Shubhra S.
Keller, Stacia
Mishra, Umesh K.
ELECTRONICS, 2021, 10 (10)
[9] Molecular beam epitaxy of N-polar InGaN
Nath, Digbijoy N.
Gur, Emre
Ringel, Steven A.
Rajan, Siddharth
APPLIED PHYSICS LETTERS, 2010, 97 (07)
[10] The effect of polarity on MOCVD growth of thick InGaN
Al Balushi, Zakaria Y.
Redwing, Joan M.
APPLIED PHYSICS LETTERS, 2017, 110 (02)

← 1 2 3 4 5 →