Experimental study on heavy ion single-event effects in flash-based FPGAs

被引：0

作者：

Zhen-Lei Yang

Xiao-Hui Wang

Hong Su

Jie Liu

Tian-Qi Liu

Kai Xi

Bin Wang

Song Gu

Qian-Shun She

机构：

[1] Chinese Academy of Sciences,Institute of Modern Physics

[2] University of Chinese Academy of Sciences,undefined

来源：

Nuclear Science and Techniques | 2016年 / 27卷

关键词：

Single-event effects (SEEs); Flash-based FPGAs; HIRFL; Heavy ion experiments;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

With extensive use of flash-based field-programmable gate arrays (FPGAs) in military and aerospace applications, single-event effects (SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi ProASIC3 product family. The relation between the cross section and different linear energy transfer (LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 → 1 upsets (zeros) and 1 → 0 upsets (ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 MeV cm2/mg. Post-beam tests show that the programming module is damaged due to the high-LET ions.

引用

共 33 条

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