Large-signal simulation of semiconductor lasers on device level: numerical aspects of the harmonic balance method

被引：0

作者：

Bernhard Schmithüsen

Stefan Odermatt

Bernd Witzigmann

机构：

[1] Synopsys Switzerland LLC,

[2] ETH Zurich,undefined

来源：

Optical and Quantum Electronics | 2008年 / 40卷

关键词：

Harmonic balance; Semiconductor laser; Device simulation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Large-signal modulation characteristics are key specifications in analog and digital applications of optoelectronic devices. In this work we present a novel approach for the modeling of these characteristics for semiconductor lasers on device level. A multi-tone harmonic balance method for a physics-based electro-thermal-optical model is utilized. The numerical aspects of the framework are described and illustrated for a realistic VCSEL example.

引用

页码：355 / 360

页数：5

共 6 条

[1]

Carlson C.(2002)Analog modulation properties of oxide confined VCSELs at microwave frequencies IEEE J Lightwave Technol. 20 1740-1749

[2]

Odermatt S.(2006)A microscopic model for the static and dynamic lineshape of semiconductor lasers IEEE JQE 42 538-551

[3]

Witzigmann B.(2006)Harmonic balance analysis for semiconductor lasers under large-signal modulation Opt. Quantum Electron. 38 1039-1044

[4]

Odermatt S.(2000)Physics-based simulation of nonlinear distortion in semiconductor devices using the harmonic balance method Comput. Methods Appl. Mech. Eng. 181 467-482

[5]

Troyanovsky B.(2003)10 Gbit/s VCSELs for datacom: devices and applications Proc. SPIE 4942 29-43

[6]

Vez D.(undefined)undefined undefined undefined undefined-undefined

← 1 →