Broadband Optical Reflection Modulator in Indium-Tin-Oxide-Filled Hybrid Plasmonic Waveguide with High Modulation Depth

被引：0
|
作者：
Lei Han
Huafeng Ding
Tianye Huang
Xu Wu
Bingwei Chen
Kaixuan Ren
Songnian Fu
机构：
[1] China University of Geosciences (Wuhan),School of Mechanical Engineering and Electronic Information
[2] Huazhong University of Science and Technology,National Engineering Laboratory for Next Generation Internet Access System, School of Optics and Electronic Information
来源：
Plasmonics | 2018年 / 13卷
关键词：
Integrated optics devices; Surface-plasmon resonance; Modulators;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A surface plasmon resonance (SPR)-based optical reflection modulator consisting of vertically stacked silica-silicon-HfO2-ITO-HfO2-Ag-prism multilayer is proposed and numerically investigated. The free carrier-concentration-dependent permittivity of indium-tin-oxide (ITO) at the HfO2/ITO interface induces an epsilon-near-zero (ENZ) effect contributing to strong field enhancement and modifies the SPR condition of incident light. With optimal geometry parameters and proper design of carrier concentration at the accumulation layer, modulation depth (MD) of ~100% and insertion loss (IL) of 3.7% can be simultaneously achieved. The IL can be further reduced by engineering silicon layer thickness. Moreover, the device offers a broadband operation wavelength from 1.5 to 1.6 μm with the variations of MD and IL smaller than 4 and 3%, respectively.
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页码：1309 / 1314
页数：5
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