Characterization of palladium-related defects in silicon

被引：0
作者：
R. Dogra
A. P. Byrne
D. A. Brett
M. C. Ridgway
机构：
[1] Beant College of Engineering & Technology,Department of Nuclear Physics, Research School of Physical Sciences and Engineering
[2] Australian National University,Department of Physics, Faculty of Science
[3] Australian National University,Department of Electronic Materials Engineering
[4] RSPhysSE,undefined
[5] Australian National University,undefined
来源：
Hyperfine Interactions | 2007年 / 177卷
关键词：
Palladium; Silicon; Defects; Electric field gradient; Perturbed angular correlation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Using 100Pd/100Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T3/2 temperature dependence of their electric field gradients.
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页码：33 / 37
页数：4
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