Planar Triode for Vacuum Microelectronics

被引：0

作者：

Rekhviashvili S.S. ^{[1
]}

Gaev D.S. ^{[2
]}

机构：

[1] Institute of Applied Mathematics and Automation, Kabardino-Balkaria Scientific Center, Russian Academy of Sciences, Nalchik, 360000, Kabardino-Balkar Republic

[2] Kabardino-Balkarian State University, Nalchik, 360004, Kabardino-Balkar Republic

来源：

Russian Microelectronics | 2020年 / 49卷 / 03期

关键词：

cutoff voltage; electron emission; planar vacuum triode; vacuum microelectronics;

D O I：

10.1134/S1063739720020079

中图分类号：

学科分类号：

摘要：

Abstract: The article studies a triode for vacuum microelectronics with horizontal geometry (planar triode). A simple theoretical model of the device is proposed and the minimum cutoff voltage is calculated. Experiments are carried out on the fundamental model of the device, which qualitatively confirm the main theoretical conclusions. © 2020, Pleiades Publishing, Ltd.

引用

页码：210 / 213

页数：3

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