Optical and electronic properties of pure and fully hydrogenated SiC and GeC nanosheets: first-principles study

被引:0
作者
Soleyman Majidi
Negin Beryani Nezafat
D. P. Rai
Amine Achour
Hassan Ghaziasadi
Amin Sheykhian
Shahram Solaymani
机构
[1] Islamic Azad University,Department of Physics, College of Technical and Engineering, Saveh Branch
[2] Islamic Azad University,Young Researchers and Elite Club, West Tehran Branch
[3] Pachhunga University College,Department of Physics
[4] University of Namur,LISE Laboratory, Research Centre in Physics of Matter and Radiation (PMR)
[5] Islamic Azad University,Department of Electrical Engineering, College of Technical and Engineering, Saveh Branch
[6] Payame Noor University (PNU),Department of Physics
来源
Optical and Quantum Electronics | 2018年 / 50卷
关键词
SiC and GeC nanosheets; Ab initio studies; DFT; Optical and electronic properties; Electric field;
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摘要
In this work, the electronic and linear optical properties of pure and fully hydrogenated SiC and GeC nanosheets have been studied using the full potential linearized augmented plane wave method within the density functional theory. Our study on SiC and GeC has confirmed their potential applications in electronic devices. The dielectric tensor is derived within the random phase approximation. The dielectric function, reflectivity, energy loss function and refraction index of these nanosheets for parallel (E||X) and perpendicular (E||Z) electric field polarization directions are well described. It is observed that hydrogenated nanosheets have semiconductor behavior with anisotropic optical spectra for both E||X and E||Z polarization direction. Also, hydrogenated nanosheets provide new electronic transitions between their neighboring atoms.
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[11]  
Menendez J(2006)Optical properties of SiC nanosheet J. Phys. Condens. Matter 18 4231-4241
[12]  
Hu C(1992)Effects of the chemical bonding on the optical and mechanical properties for germanium carbide films used as antireflection and protection coating of ZnS windows Semicond. Sci. Technol. 7 863-880
[13]  
Kouvetakis J(2016)Recent developments in SiC single-crystal electronics Silicon 8 533-539
[14]  
Bhattacharya A(2011)Investigation of silicon carbide based optical fiber coupled surface plasmon resonance sensor J. Nanopart. Res. 13 5425-5433
[15]  
Bhattacharya S(2004)From Si nanowire to SiC nanotube Science 306 666-669
[16]  
Majumder C(2000)Electric field effect in atomically thin carbon films J. Appl. Phys. 88 6462-6466
[17]  
Das GP(1996)A theoretical study of stability, electronic and optical properties of GeC and SnC Phys. Rev. Lett. 77 3865-3868
[18]  
Blöchl PE(1993)Generalized gradient approximation made simple Model. Simul. Mater. Sci. Eng. 1 741-754
[19]  
Jepsen O(2002)Energetics and electronic structure of the hypothetical cubic zincblende form of GeC J. Am. Chem. Soc. 124 14464-14471
[20]  
Andersen OK(2016)Formation of silicon carbide nanotubes and nanowires via reaction of silicon (from disproportionation of silicon monoxide) with carbon nanotubes J. Mater. Sci. Mater. Electron. 27 9272-9277