Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor

被引：0
作者：
Vahideh KhademHosseini
Daryoosh Dideban
MohammadTaghi Ahmadi
Razali Ismail
机构：
[1] University of Kashan,Institute of Nanoscience and Nanotechnology
[2] University of Kashan,Department of Electrical and Computer Engineering
[3] Pardis of Urmia University,Department of Electrical Engineering
[4] Urmia University,Nanotechnology Research Center, Nano Electronic Research Group, Physics Department
[5] Universiti Teknologi Malaysia,Faculty of Electrical Engineering
来源：
Brazilian Journal of Physics | 2018年 / 48卷
关键词：
Co-tunneling; Coulomb blockade; Fullerene; Leakage current; Multiple Islands; Single-electron transistor;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET.
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页码：406 / 410
页数：4
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